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RU1E002SP
? Electrical characteristics (Ta = 25 ? C)
　
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
-
Typ.
-
Max.
? 10
Unit
? A
Conditions
V GS = ? 20V, V DS =0V
Drain-source breakdown voltage V (BR)DSS
? 30
-
-
V
I D = ? 1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on) *
l Y fs l *
C iss
C oss
C rss
t d(on) *
t r *
t d(off) *
t f *
-
? 1
-
-
-
0.2
-
-
-
-
-
-
-
-
-
0.9
1.4
1.6
-
30
10
5
4
6
20
23
? 1
? 2.5
1.4
2.1
2.4
-
-
-
-
-
-
-
-
? A
V
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 30V, V GS =0V
V DS = ? 10V, I D = ? 1mA
I D = ? 0.25A, V GS = ? 10 V
I D = ? 0.15A, V GS = ? 4.5V
I D = ? 0.15A, V GS = ? 4V
V DS = ? 10V, I D = ? 0.15A
V DS = ? 10V
V GS =0V
f=1MHz
V DD ? 15V, I D = ? 0.15A
V GS = ? 10V
R L =100 ?
R G =10 ?
*Pulsed
? Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
V SD *
Min.
-
Typ.
-
Max.
? 1.2
Unit
V
Conditions
I s = ? 0.1A, V GS =0V
*Pulsed
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? 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.08 - Rev.A
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